MMBT9015 for switching and af amplifier applications as complementary types the npn transistor mmbt9014 is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 50 v collector emitter voltage -v ceo 45 v emitter base voltage -v ebo 5 v collector current -i c 100 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -v ce = 5 v, -i c = 1 ma MMBT9015b MMBT9015c MMBT9015d h fe h fe h fe 125 220 420 250 475 800 - - - collector cutoff current at -v cb = 50 v -i cbo - 50 na emitter cutoff current at -v eb = 5 v -i ebo - 50 na collector base breakdown voltage at -i c = 100 a -v (br)cbo 50 - v collector emitter breakdown voltage at -i c = 1 ma -v (br)ceo 45 - v emitter base breakdown voltage at -i e = 100 a -v (br)ebo 5 - v collector emitter saturation voltage at -i c = 100 ma, -i b = 5 ma -v ce(sat) - 0.65 v base emitter saturation voltage at -i c = 100 ma, -i b = 5 ma -v be(sat) - 1 v gain bandwidth product at -v ce = 5 v, -i c = 10 ma f t 100 - mhz output capacitance at -v cb = 10 v, f = 1 mhz c ob - 7 pf noise figure at -v ce = 5 v, -i c = 200 a, f = 1 khz, r g = 2 k ? nf - 10 db sot-23 plastic package 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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